BLF8G24LS-100GVJ

Product Overview

Category: Electronic Component
Use: RF Power Transistor
Characteristics: High power, high frequency
Package: SMD
Essence: Amplification of radio frequency signals
Packaging/Quantity: Tape and reel, 100 pieces per reel

Specifications

• Model: BLF8G24LS-100GVJ
• Frequency: 2.45 GHz
• Power Output: 100W
• Voltage: 28V
• Gain: 24dB
• Efficiency: 65%
• Package Type: SOT539A

Detailed Pin Configuration

1. Source
2. Gate
3. Drain
4. Ground
5. RF Input
6. RF Output

Functional Features

• High power gain
• Broadband performance
• High efficiency
• Good thermal stability

Advantages

• Suitable for high-power applications
• Wide operating frequency range
• Excellent linearity

Disadvantages

• Requires careful thermal management
• Sensitive to voltage spikes

Working Principles

The BLF8G24LS-100GVJ operates on the principle of amplifying radio frequency signals using a field-effect transistor (FET). When a small input signal is applied to the gate terminal, it controls the flow of current between the source and drain terminals, resulting in amplification of the RF signal.

Detailed Application Field Plans

1. Telecommunications: Used in base station amplifiers for wireless communication systems.
2. Radar Systems: Employed in radar transmitters for military and civilian applications.
3. Broadcasting: Utilized in high-power transmitters for radio and television broadcasting.

Detailed and Complete Alternative Models

1. BLF7G22LS-100GVJ
   • Frequency: 2.2 GHz
   • Power Output: 100W
   • Voltage: 28V
   • Gain: 22dB
2. BLF9G20LS-100GVJ
   • Frequency: 2.0 GHz
   • Power Output: 100W
   • Voltage: 28V
   • Gain: 20dB

This concludes the entry for BLF8G24LS-100GVJ, covering its product details, specifications, features, advantages, disadvantages, working principles, application field plans, and alternative models.