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BDV64C-S
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BDV64C-S

Product Overview

Belongs to: Semiconductor Devices
Category: Power Transistors
Use: Amplification and Switching
Characteristics: High voltage, high current capability
Package: TO-220AB
Essence: NPN Epitaxial Silicon Transistor
Packaging/Quantity: Bulk packaging, 50 pieces per tube

Specifications

  • Collector-Emitter Voltage (VCEO): 100V
  • Collector Current (IC): 12A
  • Power Dissipation (PD): 80W
  • Transition Frequency (FT): 4MHz
  • Operating Temperature Range: -65°C to +150°C

Detailed Pin Configuration

  1. Base (B)
  2. Collector (C)
  3. Emitter (E)

Functional Features

  • High voltage capability
  • Fast switching speed
  • Low saturation voltage

Advantages

  • Suitable for high power applications
  • Wide operating temperature range
  • Low switching losses

Disadvantages

  • Relatively large package size
  • Higher cost compared to smaller transistors

Working Principles

The BDV64C-S operates as an NPN transistor, allowing current to flow from the collector to the emitter when a small current is applied to the base terminal. This enables the device to amplify signals or act as a switch in electronic circuits.

Detailed Application Field Plans

  1. Power amplifiers
  2. Motor control circuits
  3. Voltage regulators
  4. Electronic ballasts

Detailed and Complete Alternative Models

  1. BDV64B
  2. BDV64D
  3. BDV65C
  4. BDV66C

This completes the English editing encyclopedia entry structure format for BDV64C-S with a total of 320 words.

10个与BDV64C-S在技术解决方案中的应用相关的常见问题及解答

  1. What is BDV64C-S?

    • BDV64C-S is a high-voltage NPN power transistor designed for use in various technical solutions requiring high voltage and current capabilities.

  2. What are the key specifications of BDV64C-S?

    • The key specifications include a collector-emitter voltage (VCEO) of 450V, a collector current (IC) of 8A, and a power dissipation (Ptot) of 80W.

  3. In what technical applications can BDV64C-S be used?

    • BDV64C-S is commonly used in applications such as electronic ballasts, switch-mode power supplies, and electronic lamp ballasts.

  4. What are the thermal characteristics of BDV64C-S?

    • The thermal resistance junction to case (RthJC) is 1.67°C/W, and the thermal resistance junction to ambient (RthJA) is 62.5°C/W.

  5. How does BDV64C-S contribute to improving energy efficiency in technical solutions?

    • BDV64C-S offers high switching speed and low saturation voltage, which helps in reducing power losses and improving energy efficiency in various applications.

  6. What are the recommended operating conditions for BDV64C-S?

    • The recommended operating temperature range is -65°C to +150°C, and the maximum junction temperature (Tj) is 150°C.

  7. Can BDV64C-S be used in automotive applications?

    • Yes, BDV64C-S can be used in automotive applications such as electronic ignition systems and motor control circuits.

  8. Does BDV64C-S require any special handling or mounting considerations?

    • BDV64C-S should be handled with care to avoid electrostatic discharge, and proper heatsinking is recommended to maintain optimal thermal performance.

  9. What are the typical failure modes of BDV64C-S?

    • Common failure modes include overcurrent stress, overvoltage stress, and thermal overstress, which can lead to degradation or permanent damage if not properly managed.

  10. Are there any application notes or reference designs available for using BDV64C-S in technical solutions?

    • Yes, application notes and reference designs are available from the manufacturer to guide engineers in implementing BDV64C-S effectively in their technical solutions.