C2M1000170J
Product Overview
- Category: Power MOSFET
- Use: High-frequency power conversion applications
- Characteristics: High efficiency, low on-resistance, fast switching speed
- Package: TO-247-3
- Essence: Silicon Carbide Power MOSFET
- Packaging/Quantity: Tube / 25 pieces
Specifications
- Voltage - Rated: 1700V
- Current - Non-Continuous (Tc): 96A
- Rds On (Max) @ Id, Vgs: 80 mOhm @ 48A, 20V
- Gate Charge (Qg) @ Vgs: 110nC @ 20V
- Input Capacitance (Ciss) @ Vds: 5200pF @ 25V
- Power Dissipation (Max): 300W
Detailed Pin Configuration
- Pin 1: Gate
- Pin 2: Drain
- Pin 3: Source
Functional Features
- Fast switching speed for high-frequency applications
- Low on-resistance for high efficiency
- High voltage rating for robust performance
Advantages and Disadvantages
- Advantages:
- High efficiency
- Robust performance at high frequencies
- Low on-resistance
- Disadvantages:
- Higher cost compared to traditional silicon MOSFETs
- Sensitive to overvoltage conditions
Working Principles
The C2M1000170J operates based on the principles of field-effect transistors, utilizing its silicon carbide material to achieve high-speed switching and low on-resistance characteristics.
Detailed Application Field Plans
This MOSFET is suitable for a wide range of high-frequency power conversion applications, including: - Switch-mode power supplies - Solar inverters - Motor drives - Electric vehicle power systems
Detailed and Complete Alternative Models
- C3M0065090J: 900V, 65mOhm, 31A
- C3M0075120J: 1200V, 75mOhm, 32A
- C3M0120090J: 900V, 120mOhm, 18A
- C3M0280090J: 900V, 280mOhm, 9A
Note: The alternative models listed above are also silicon carbide power MOSFETs with varying specifications.
This comprehensive entry provides an in-depth understanding of the C2M1000170J, covering its basic information, specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models.
10个与C2M1000170J在技术解决方案中的应用相关的常见问题及解答
What is C2M1000170J?
- C2M1000170J is a silicon carbide power MOSFET designed for high-power applications, offering low on-resistance and fast switching capabilities.
What are the key features of C2M1000170J?
- The key features include a low on-resistance of 170mΩ, high blocking voltage of 1200V, fast switching speed, and high temperature performance.
In what technical solutions can C2M1000170J be used?
- C2M1000170J is commonly used in applications such as solar inverters, electric vehicle charging systems, industrial motor drives, and power supplies.
What are the advantages of using C2M1000170J in technical solutions?
- The advantages include improved efficiency, reduced system size and weight, higher power density, and enhanced reliability due to its superior thermal performance.
What is the maximum operating temperature for C2M1000170J?
- The maximum operating temperature for C2M1000170J is typically up to 175°C, making it suitable for demanding high-temperature environments.
Does C2M1000170J require any special gate driving considerations?
- Yes, C2M1000170J requires careful consideration of gate drive voltage and current to ensure optimal performance and reliability.
Can C2M1000170J be used in parallel configurations for higher power applications?
- Yes, C2M1000170J can be used in parallel configurations to achieve higher power levels while maintaining efficient operation.
What are the typical application circuits for C2M1000170J?
- Typical application circuits include half-bridge, full-bridge, and three-phase inverter configurations for various power conversion and motor control applications.
Are there any specific thermal management requirements for C2M1000170J?
- Proper thermal management, such as effective heat sinking and temperature monitoring, is essential to maximize the performance and reliability of C2M1000170J in high-power applications.
Where can I find detailed technical specifications and application notes for C2M1000170J?
- Detailed technical specifications and application notes for C2M1000170J can be found on the manufacturer's website or in the product datasheet and application guides.