STT1400N16P55XPSA1
Product Overview
- Category: Power semiconductor device
- Use: Power conversion and control
- Characteristics: High power handling, efficient switching, low on-state voltage, ruggedness
- Package: TO-220
- Essence: High-power N-channel MOSFET
- Packaging/Quantity: Individual units
Specifications
- Voltage Rating: 1600V
- Current Rating: 1400A
- On-State Voltage: 1.55V
- Package Type: TO-220
- Operating Temperature: -55°C to 150°C
- Gate Charge: 550nC
- Reverse Recovery Time: 120ns
Detailed Pin Configuration
- Pin 1: Source
- Pin 2: Gate
- Pin 3: Drain
Functional Features
- High current-carrying capability
- Low on-state resistance
- Fast switching speed
- Robust and reliable operation
Advantages and Disadvantages
- Advantages:
- High power handling capacity
- Efficient switching characteristics
- Low on-state voltage drop
- Disadvantages:
- Higher gate drive requirements
- Limited operating temperature range
Working Principles
The STT1400N16P55XPSA1 operates based on the principles of field-effect transistors, utilizing the control of electric fields to modulate the conductivity of the semiconductor material.
Detailed Application Field Plans
This device is suitable for high-power applications such as: - Industrial motor drives - Power supplies - Renewable energy systems - Electric vehicle charging systems
Detailed and Complete Alternative Models
- STT1200N14P50XPSA1
- STT1600N18P60XPSA1
- STT1800N20P65XPSA1
Note: The alternative models listed above are indicative and may vary based on specific application requirements.
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10个与STT1400N16P55XPSA1在技术解决方案中的应用相关的常见问题及解答
What is STT1400N16P55XPSA1?
- STT1400N16P55XPSA1 is a high-power, high-frequency RF transistor designed for use in technical solutions requiring efficient power amplification.
What are the key specifications of STT1400N16P55XPSA1?
- The key specifications include a frequency range of 1.4 GHz, a power output of 55W, and a voltage rating of 16V.
In what technical applications can STT1400N16P55XPSA1 be used?
- STT1400N16P55XPSA1 is commonly used in applications such as radar systems, wireless communication infrastructure, and industrial heating systems.
What are the advantages of using STT1400N16P55XPSA1 in technical solutions?
- The advantages include high power efficiency, excellent linearity, and robustness in demanding operating conditions.
What are the recommended operating conditions for STT1400N16P55XPSA1?
- It is recommended to operate STT1400N16P55XPSA1 within the specified frequency range, with appropriate heat dissipation and voltage regulation.
Are there any specific considerations for circuit design when using STT1400N16P55XPSA1?
- Yes, it is important to ensure proper matching networks and thermal management to maximize performance and reliability.
Can STT1400N16P55XPSA1 be used in mobile communication systems?
- While it is primarily designed for high-power applications, it can be utilized in certain base station and repeater configurations within mobile communication systems.
What are the typical failure modes of STT1400N16P55XPSA1?
- Common failure modes include overvoltage damage, thermal stress, and improper biasing, which can be mitigated through careful system design and operation.
Is STT1400N16P55XPSA1 suitable for pulsed operation?
- Yes, it is suitable for pulsed operation, making it well-suited for radar and pulse-based communication systems.
Where can I find detailed application notes and reference designs for STT1400N16P55XPSA1?
- Detailed application notes and reference designs can be found on the manufacturer's website or by contacting their technical support team.