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IXFR12N100Q
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IXFR12N100Q

Product Overview

  • Category: Power MOSFET
  • Use: Power switching applications
  • Characteristics: High voltage, high current capability
  • Package: TO-220AB
  • Essence: N-channel enhancement mode power transistor
  • Packaging/Quantity: 50 pieces per tube

Specifications

  • Voltage Rating: 100V
  • Current Rating: 12A
  • RDS(ON): 0.12Ω
  • Gate Threshold Voltage (VGS(th)): 2-4V
  • Operating Temperature Range: -55°C to 175°C

Detailed Pin Configuration

  1. Gate (G)
  2. Drain (D)
  3. Source (S)

Functional Features

  • Low on-resistance
  • Fast switching speed
  • Low gate charge
  • Avalanche energy specified
  • Improved dv/dt capability

Advantages and Disadvantages

Advantages

  • High voltage capability
  • Low on-resistance
  • Fast switching speed
  • Suitable for high-frequency applications

Disadvantages

  • Higher gate threshold voltage compared to some alternative models
  • Limited operating temperature range

Working Principles

The IXFR12N100Q is an N-channel enhancement mode power MOSFET that operates by controlling the flow of current between the drain and source terminals using the gate voltage.

Detailed Application Field Plans

The IXFR12N100Q is suitable for use in various power switching applications such as: - Switching power supplies - Motor control - Inverters - DC-DC converters - LED lighting

Detailed and Complete Alternative Models

  • IRF3205
  • FQP30N06L
  • STP55NF06L
  • IRLB8748

This completes the English editing encyclopedia entry structure format for IXFR12N100Q.

10个与IXFR12N100Q在技术解决方案中的应用相关的常见问题及解答

  1. What is IXFR12N100Q?

    • IXFR12N100Q is a specific model of power MOSFET transistor designed for use in various technical solutions.

  2. What are the key specifications of IXFR12N100Q?

    • The key specifications of IXFR12N100Q include a voltage rating of 100V, a current rating of 12A, and a low on-resistance for efficient power handling.

  3. In what applications can IXFR12N100Q be used?

    • IXFR12N100Q can be used in applications such as power supplies, motor control, lighting, and other electronic systems requiring high-power switching.

  4. What are the thermal characteristics of IXFR12N100Q?

    • The thermal characteristics of IXFR12N100Q include a low thermal resistance and efficient heat dissipation, making it suitable for high-power applications.

  5. Does IXFR12N100Q require any special driving circuitry?

    • IXFR12N100Q may require appropriate gate driving circuitry to ensure optimal performance and reliability in the application.

  6. Is IXFR12N100Q suitable for high-frequency switching applications?

    • IXFR12N100Q is designed for medium to high-frequency switching applications, providing fast switching speeds and low switching losses.

  7. What are the recommended operating conditions for IXFR12N100Q?

    • The recommended operating conditions for IXFR12N100Q include a specified voltage range, current limits, and temperature constraints to ensure safe and reliable operation.

  8. Are there any alternative components that can be used in place of IXFR12N100Q?

    • While there may be alternative components with similar specifications, IXFR12N100Q is chosen for its specific performance characteristics and compatibility with certain technical solutions.

  9. How can IXFR12N100Q be protected from overcurrent or overvoltage conditions?

    • IXFR12N100Q can be protected using external circuitry such as overcurrent protection devices, transient voltage suppressors, and proper layout design to mitigate potential risks.

  10. Where can I find detailed application notes or reference designs for using IXFR12N100Q in technical solutions?

    • Detailed application notes and reference designs for using IXFR12N100Q can often be found in the product datasheet, manufacturer's application guides, or technical support resources provided by the component supplier.