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IXGH20N120BD1
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IXGH20N120BD1

Product Overview

  • Category: Power semiconductor device
  • Use: High power switching applications
  • Characteristics: High voltage, high current capability, fast switching speed
  • Package: TO-247
  • Essence: Power MOSFET
  • Packaging/Quantity: Single unit packaging

Specifications

  • Voltage Rating: 1200V
  • Current Rating: 20A
  • RDS(on): 0.2 ohms
  • Gate Threshold Voltage: 4V
  • Gate Charge: 80nC
  • Operating Temperature Range: -55°C to 150°C

Detailed Pin Configuration

The IXGH20N120BD1 features a standard TO-247 pin configuration with three pins: 1. Gate (G) 2. Drain (D) 3. Source (S)

Functional Features

  • High voltage capability
  • Low on-state resistance
  • Fast switching speed
  • Low gate charge
  • Avalanche energy rated

Advantages and Disadvantages

Advantages

  • High power handling capability
  • Low conduction losses
  • Fast switching performance
  • Suitable for high frequency applications

Disadvantages

  • Higher cost compared to lower voltage devices
  • Requires careful handling due to high voltage rating

Working Principles

The IXGH20N120BD1 operates based on the principles of field-effect transistors, utilizing the control of an electric field to modulate the conductivity of the device.

Detailed Application Field Plans

The IXGH20N120BD1 is suitable for various high power applications including: - Switch mode power supplies - Motor drives - Inverters - Induction heating - Welding equipment

Detailed and Complete Alternative Models

  • IXGH20N100BD1: Similar specifications with a lower voltage rating
  • IXGH25N120BD1: Higher current rating with similar voltage capability
  • IXGH30N120BD1: Higher current and lower RDS(on) at the expense of higher gate charge

This comprehensive entry provides detailed information about the IXGH20N120BD1, covering its product overview, specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models.

10个与IXGH20N120BD1在技术解决方案中的应用相关的常见问题及解答

  1. What is the maximum voltage rating of IXGH20N120BD1?

    • The maximum voltage rating of IXGH20N120BD1 is 1200V.

  2. What is the maximum continuous collector current of IXGH20N120BD1?

    • The maximum continuous collector current of IXGH20N120BD1 is 40A.

  3. What type of package does IXGH20N120BD1 come in?

    • IXGH20N120BD1 comes in a TO-247 package.

  4. What are the typical applications for IXGH20N120BD1?

    • Typical applications for IXGH20N120BD1 include motor drives, inverters, and power supplies.

  5. What is the on-state voltage of IXGH20N120BD1 at a given current?

    • The on-state voltage of IXGH20N120BD1 varies with current and temperature, and can be found in the datasheet.

  6. Does IXGH20N120BD1 have built-in protection features?

    • IXGH20N120BD1 does not have built-in protection features and may require external circuitry for overcurrent or overvoltage protection.

  7. What is the thermal resistance of IXGH20N120BD1?

    • The thermal resistance of IXGH20N120BD1 can be found in the datasheet and is typically specified in junction-to-case or junction-to-ambient values.

  8. Can IXGH20N120BD1 be used in parallel to increase current handling capability?

    • Yes, IXGH20N120BD1 can be used in parallel to increase current handling capability, but proper layout and current sharing considerations must be taken into account.

  9. What is the switching frequency range for IXGH20N120BD1 in typical applications?

    • The switching frequency range for IXGH20N120BD1 depends on the specific application and circuit design, and should be carefully considered for optimal performance.

  10. Are there any recommended gate driver ICs for driving IXGH20N120BD1?

    • Several gate driver ICs are compatible with IXGH20N120BD1, and the selection should be based on the specific application requirements and operating conditions.