IXGK82N120B3
Product Overview
- Category: Power semiconductor device
- Use: High-power switching applications
- Characteristics: High voltage, high current capability, low on-state resistance
- Package: TO-264
- Essence: Efficient power control
- Packaging/Quantity: Single unit packaging
Specifications
- Voltage Rating: 1200V
- Current Rating: 80A
- On-State Resistance: 0.12Ω
- Gate Threshold Voltage: 3.5V
- Gate Charge: 110nC
- Operating Temperature Range: -55°C to 150°C
Detailed Pin Configuration
The IXGK82N120B3 features a standard TO-264 pin configuration with three pins: gate (G), drain (D), and source (S).
Functional Features
- High voltage and current handling capability
- Low on-state resistance for efficient power control
- Fast switching speed for improved performance
- Robust design for reliable operation in demanding environments
Advantages and Disadvantages
Advantages
- High power handling capacity
- Low on-state resistance
- Fast switching speed
Disadvantages
- Higher cost compared to lower-rated devices
- Requires careful thermal management due to high power dissipation
Working Principles
The IXGK82N120B3 operates based on the principles of field-effect transistors, utilizing its gate, drain, and source terminals to control the flow of current in high-power switching applications.
Detailed Application Field Plans
The IXGK82N120B3 is ideally suited for use in: - Motor drives - Uninterruptible power supplies (UPS) - Renewable energy systems - Industrial power converters
Detailed and Complete Alternative Models
- IXGK80N120B3: Similar specifications with slightly lower current rating
- IXGK85N120B3: Higher current rating with comparable voltage and on-state resistance
In conclusion, the IXGK82N120B3 is a high-performance power semiconductor device designed for demanding high-power switching applications, offering efficient power control and robust operation. Its advanced features make it suitable for various industrial and renewable energy applications, providing reliability and performance.
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10个与IXGK82N120B3在技术解决方案中的应用相关的常见问题及解答
What is IXGK82N120B3?
- IXGK82N120B3 is a high-power insulated gate bipolar transistor (IGBT) designed for use in various technical solutions requiring high voltage and current handling capabilities.
What are the key specifications of IXGK82N120B3?
- The key specifications of IXGK82N120B3 include a voltage rating of 1200V, a current rating of 80A, and a low saturation voltage to minimize power losses.
In what technical applications can IXGK82N120B3 be used?
- IXGK82N120B3 is commonly used in applications such as motor drives, renewable energy systems, welding equipment, and industrial power supplies due to its high power handling capabilities.
What are the advantages of using IXGK82N120B3 in technical solutions?
- The advantages of using IXGK82N120B3 include its high voltage and current ratings, low saturation voltage, and robust construction, which make it suitable for demanding applications.
How does IXGK82N120B3 compare to other IGBTs in its class?
- IXGK82N120B3 offers competitive performance in terms of voltage and current ratings, while also providing low conduction and switching losses, making it a preferred choice for high-power applications.
What cooling methods are recommended for IXGK82N120B3?
- To ensure optimal performance and reliability, IXGK82N120B3 should be cooled using methods such as forced air cooling, heat sinks, or liquid cooling systems, depending on the specific application requirements.
Are there any application notes or reference designs available for IXGK82N120B3?
- Yes, application notes and reference designs are available from the manufacturer to assist engineers in implementing IXGK82N120B3 in various technical solutions.
What protection features does IXGK82N120B3 offer?
- IXGK82N120B3 includes built-in protection features such as short-circuit protection, overcurrent protection, and overtemperature protection to safeguard the device and the overall system.
Can IXGK82N120B3 be used in parallel configurations for higher power applications?
- Yes, IXGK82N120B3 can be used in parallel configurations to increase the overall power handling capability, provided that proper current sharing and thermal management measures are implemented.
Where can I find detailed datasheets and application information for IXGK82N120B3?
- Detailed datasheets and application information for IXGK82N120B3 can be obtained from the manufacturer's website or by contacting their technical support team for assistance.