Category: Power Semiconductor
Use: Switching applications in power supplies and motor control
Characteristics: High voltage, high speed switching, low on-resistance
Package: TO-247
Essence: Efficient power switching
Packaging/Quantity: Single unit
The IXST30N60BD1 is a power MOSFET designed for high-speed switching applications. When a voltage is applied to the gate terminal, it creates an electric field that allows current to flow between the drain and source terminals. The low on-resistance of the device minimizes power loss during operation.
This concludes the entry for IXST30N60BD1, covering its product details, specifications, features, and application information.
What is IXST30N60BD1?
What are the key features of IXST30N60BD1?
What technical solutions can IXST30N60BD1 be used in?
What is the maximum voltage and current rating of IXST30N60BD1?
How does IXST30N60BD1 contribute to energy efficiency in technical solutions?
What are the recommended thermal management considerations for IXST30N60BD1?
Can IXST30N60BD1 be used in automotive applications?
Are there any application notes or reference designs available for using IXST30N60BD1?
What protection features does IXST30N60BD1 offer for overcurrent and overvoltage conditions?
Where can I find detailed specifications and datasheets for IXST30N60BD1?