APTGF50DH120T3G

Product Overview

• Category: Power semiconductor device
• Use: High-power switching applications
• Characteristics: High voltage, high current capability; fast switching speed
• Package: TO-247
• Essence: Advanced Power Trench Technology
• Packaging/Quantity: Single unit packaging

Specifications

• Voltage Rating: 1200V
• Current Rating: 50A
• Technology: Silicon Carbide (SiC)
• Mounting Type: Through Hole
• Operating Temperature: -55°C to 175°C

Detailed Pin Configuration

• Pin 1: Gate
• Pin 2: Source
• Pin 3: Drain

Functional Features

• Fast switching speed
• Low on-state resistance
• High temperature operation capability
• Enhanced ruggedness and reliability

Advantages and Disadvantages

• Advantages:
  • Reduced power loss
  • Improved system efficiency
  • Higher temperature operation
• Disadvantages:
  • Higher cost compared to traditional silicon devices
  • More complex drive circuitry required

Working Principles

The APTGF50DH120T3G utilizes advanced silicon carbide technology to enable high-speed switching and efficient power handling. When a suitable gate signal is applied, the device allows current to flow between the source and drain terminals, enabling power control in various applications.

Detailed Application Field Plans

This device is well-suited for use in: - High-power industrial inverters - Electric vehicle power systems - Renewable energy converters - Motor drives and traction systems

Detailed and Complete Alternative Models

• APTGF30DH60T3G: 600V, 30A SiC power module
• APTGF20H60T3G: 600V, 20A SiC power module
• APTGF75U120T3G: 1200V, 75A SiC power module

Note: The alternative models listed above are indicative and may vary based on specific application requirements.

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This entry provides comprehensive information about the APTGF50DH120T3G power semiconductor device, including its specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models.