APTGT35X120T3G
Product Overview
- Category: Power Transistor
- Use: High-power switching applications
- Characteristics: High voltage, high current capability
- Package: TO-247
- Essence: Efficient power management
- Packaging/Quantity: Single unit packaging
Specifications
- Voltage Rating: 1200V
- Current Rating: 35A
- Package Type: TO-247
- Mounting Type: Through Hole
- Operating Temperature: -55°C to 175°C
- Isolation Voltage: 2500Vrms
Detailed Pin Configuration
- Pin 1: Gate
- Pin 2: Collector
- Pin 3: Emitter
Functional Features
- High voltage capability
- Low spread of dynamic parameters
- High frequency operation
- Fast switching speed
Advantages and Disadvantages
- Advantages:
- High power handling capability
- Low on-state resistance
- Fast switching speed
- Disadvantages:
- Sensitivity to overvoltage spikes
- Higher cost compared to standard transistors
Working Principles
The APTGT35X120T3G operates based on the principles of field-effect transistor (FET) technology. When a voltage is applied to the gate terminal, it controls the flow of current between the collector and emitter terminals, allowing for efficient power switching.
Detailed Application Field Plans
This power transistor is suitable for various high-power applications including: - Motor control systems - Power supplies - Renewable energy systems - Industrial automation equipment
Detailed and Complete Alternative Models
- APTGT30X120T3G
- APTGT40X120T3G
- APTGT35X140T3G
This completes the entry for APTGT35X120T3G in the English editing encyclopedia entry structure format.
10个与APTGT35X120T3G在技术解决方案中的应用相关的常见问题及解答
What is APTGT35X120T3G?
- APTGT35X120T3G is a silicon carbide power MOSFET designed for high-power applications.
What are the key features of APTGT35X120T3G?
- The key features include low on-resistance, high switching speed, and high temperature operation capability.
What are the typical technical specifications of APTGT35X120T3G?
- The typical specifications include a voltage rating of 1200V, a current rating of 35A, and a low on-resistance.
In what technical solutions can APTGT35X120T3G be used?
- APTGT35X120T3G can be used in applications such as solar inverters, motor drives, and power supplies.
How does APTGT35X120T3G compare to traditional silicon MOSFETs?
- APTGT35X120T3G offers lower conduction losses, higher switching frequency capability, and better thermal performance compared to traditional silicon MOSFETs.
What are the thermal considerations when using APTGT35X120T3G?
- Proper heat sinking and thermal management are important to ensure the device operates within its specified temperature limits.
Are there any application notes or reference designs available for APTGT35X120T3G?
- Yes, application notes and reference designs are available to help engineers implement APTGT35X120T3G in their designs.
What are the recommended gate drive requirements for APTGT35X120T3G?
- Adequate gate drive voltage and current must be provided to ensure fast and reliable switching of the MOSFET.
Can APTGT35X120T3G be used in parallel configurations for higher current applications?
- Yes, APTGT35X120T3G can be used in parallel to achieve higher current handling capability.
Where can I find detailed application and usage information for APTGT35X120T3G?
- Detailed application and usage information can be found in the product datasheet and application notes provided by the manufacturer.