JAN1N6111US
Product Overview
- Category: Semiconductor Diode
- Use: Rectification and voltage regulation
- Characteristics: High reliability, low forward voltage drop, fast switching speed
- Package: DO-41 axial leaded package
- Essence: Silicon rectifier diode
- Packaging/Quantity: Available in reels or bulk packaging
Specifications
- Forward Voltage Drop: 0.7V (max) at 1A
- Reverse Voltage: 50V
- Average Rectified Current: 1A
- Peak Surge Current: 30A
- Operating Temperature Range: -65°C to +175°C
Detailed Pin Configuration
The JAN1N6111US is a two-terminal device with an anode and a cathode. It follows the standard pin configuration for DO-41 packages.
Functional Features
- High reliability and ruggedness
- Fast recovery time
- Low leakage current
- Suitable for high-frequency applications
Advantages and Disadvantages
Advantages
- Low forward voltage drop
- Fast switching speed
- High surge current capability
- Wide operating temperature range
Disadvantages
- Relatively larger size compared to surface mount diodes
- Limited reverse voltage rating compared to some other diode types
Working Principles
The JAN1N6111US operates based on the principle of semiconductor junction rectification. When forward biased, it allows current flow, and when reverse biased, it blocks the current flow.
Detailed Application Field Plans
The JAN1N6111US is commonly used in: - Power supplies - Voltage regulators - Rectifiers in electronic circuits - Switching power supplies - Snubber circuits
Detailed and Complete Alternative Models
- 1N4001: General purpose rectifier diode
- 1N5408: High current rectifier diode
- 1N5819: Schottky barrier rectifier
This information provides a comprehensive overview of the JAN1N6111US semiconductor diode, including its specifications, features, application fields, and alternative models.
10个与JAN1N6111US在技术解决方案中的应用相关的常见问题及解答
What is JAN1N6111US?
- JAN1N6111US is a high-reliability, military-grade silicon power rectifier diode designed for use in demanding technical applications.
What are the key specifications of JAN1N6111US?
- The key specifications include a maximum repetitive reverse voltage of 200 volts, average forward current of 6 amps, and a forward surge current of 150 amps.
In what technical solutions can JAN1N6111US be used?
- JAN1N6111US can be used in power supplies, inverters, converters, and other high-reliability applications where ruggedness and reliability are critical.
What are the advantages of using JAN1N6111US over standard diodes?
- JAN1N6111US offers higher reliability, extended temperature range, and better performance under harsh environmental conditions compared to standard diodes.
Is JAN1N6111US suitable for aerospace and defense applications?
- Yes, JAN1N6111US is specifically designed to meet the stringent requirements of aerospace and defense applications, making it an ideal choice for these industries.
Can JAN1N6111US handle high temperature environments?
- Yes, JAN1N6111US is designed to operate reliably in high-temperature environments, making it suitable for applications where temperature extremes are a concern.
What is the expected lifespan of JAN1N6111US in continuous operation?
- When operated within its specified parameters, JAN1N6111US can have a long operational lifespan, making it well-suited for critical and long-term technical solutions.
Does JAN1N6111US require any special handling during installation?
- While JAN1N6111US is a rugged diode, it should still be handled with care during installation to avoid damage to the device or its leads.
Are there any specific testing or qualification standards associated with JAN1N6111US?
- Yes, JAN1N6111US is typically tested and qualified according to military or aerospace standards such as MIL-PRF-19500/116, ensuring its reliability and performance.
Where can I find detailed technical documentation for JAN1N6111US?
- Detailed technical documentation for JAN1N6111US can be obtained from the manufacturer's website or through authorized distributors, providing comprehensive information on its specifications, characteristics, and application guidelines.