Microsemi Corporation
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JAN2N2323U4

JAN2N2323U4

Product Overview

  • Category: Transistor
  • Use: Amplification and switching in electronic circuits
  • Characteristics: High voltage, high current capability, low noise
  • Package: TO-18 metal can package
  • Essence: NPN bipolar junction transistor
  • Packaging/Quantity: Typically sold in reels of 1000 units

Specifications

  • Maximum Collector-Emitter Voltage: 40V
  • Maximum Collector-Base Voltage: 60V
  • Maximum Emitter-Base Voltage: 6V
  • Collector Current - Continuous: 600mA
  • Power Dissipation: 625mW
  • Transition Frequency: 250MHz
  • Operating Temperature Range: -65°C to 200°C

Detailed Pin Configuration

  1. Collector (C)
  2. Base (B)
  3. Emitter (E)

Functional Features

  • High voltage and current capability
  • Low noise
  • Fast switching speed
  • Wide operating temperature range

Advantages and Disadvantages

Advantages

  • Suitable for high-frequency applications
  • Low power consumption
  • Compact size

Disadvantages

  • Limited power dissipation capability
  • Sensitive to overvoltage conditions

Working Principles

The JAN2N2323U4 operates based on the principles of bipolar junction transistors, utilizing the control of current flow between its three terminals to amplify or switch electronic signals.

Detailed Application Field Plans

  • Audio amplifiers
  • RF amplifiers
  • Switching circuits
  • Oscillator circuits

Detailed and Complete Alternative Models

  • 2N2222
  • BC547
  • 2N3904
  • MPS2222A

This comprehensive entry provides an in-depth understanding of the JAN2N2323U4 transistor, covering its specifications, features, advantages, and application fields, as well as alternative models for comparison and substitution.

10个与JAN2N2323U4在技术解决方案中的应用相关的常见问题及解答

  1. What is the JAN2N2323U4 transistor used for?

    • The JAN2N2323U4 is a high-reliability, general-purpose NPN transistor commonly used in military and aerospace applications.

  2. What are the key specifications of the JAN2N2323U4 transistor?

    • The JAN2N2323U4 transistor typically has a maximum collector current of 600 mA, a maximum power dissipation of 625 mW, and a voltage rating of 50V.

  3. Can the JAN2N2323U4 be used in commercial applications?

    • While it is designed for military and aerospace use, the JAN2N2323U4 can also be used in certain commercial applications where high reliability and ruggedness are required.

  4. What are some typical circuit configurations using the JAN2N2323U4?

    • The JAN2N2323U4 can be used in common emitter, common base, and common collector configurations in various amplifier and switching circuits.

  5. Are there any special considerations when designing with the JAN2N2323U4?

    • Designers should consider the ruggedness and reliability of the JAN2N2323U4 when incorporating it into their circuits, as well as its military temperature range and radiation resistance.

  6. What are the alternatives to the JAN2N2323U4 if it's not available?

    • Alternatives to the JAN2N2323U4 include other high-reliability transistors such as JAN2N2222A, JAN2N2907A, and JAN2N3904.

  7. Can the JAN2N2323U4 be used in high-frequency applications?

    • The JAN2N2323U4 has a transition frequency (ft) of around 150 MHz, making it suitable for moderate frequency applications but may not be ideal for very high-frequency designs.

  8. What are the typical failure modes of the JAN2N2323U4?

    • Common failure modes include thermal runaway, breakdown due to excessive voltage or current, and degradation of gain over time.

  9. Is the JAN2N2323U4 suitable for harsh environments?

    • Yes, the JAN2N2323U4 is designed to withstand harsh environmental conditions, including temperature extremes and radiation exposure.

  10. Where can I find detailed technical information about the JAN2N2323U4?

    • Detailed technical information about the JAN2N2323U4 can be found in its datasheet, which is available from the manufacturer or distributor.