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PDTC114EMB,315
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PDTC114EMB,315

Product Overview

  • Category: Semiconductor
  • Use: Signal switching and amplification
  • Characteristics: High gain, low noise, small package size
  • Package: SOT883B
  • Essence: NPN resistor-equipped transistors
  • Packaging/Quantity: Tape and reel, 3000 units per reel

Specifications

  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Current - Collector (Ic) (Max): 100mA
  • Power - Max: 200mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2mA, 5V
  • Transition Frequency: 250MHz

Detailed Pin Configuration

  1. Base
  2. Emitter
  3. Collector

Functional Features

  • High current gain
  • Low voltage drop
  • Fast switching speed

Advantages

  • Small package size
  • Low noise
  • High gain

Disadvantages

  • Limited power handling capability
  • Sensitivity to temperature variations

Working Principles

The PDTC114EMB,315 is a NPN resistor-equipped transistor designed for signal switching and amplification. It operates by controlling the flow of current between its collector and emitter terminals based on the voltage applied to its base terminal.

Detailed Application Field Plans

This component is commonly used in audio amplifiers, sensor circuits, and signal processing applications due to its high gain and low noise characteristics. It is also suitable for use in portable electronic devices where space is limited.

Detailed and Complete Alternative Models

  • BC847B,215
  • MMBT3904LT1G
  • 2N3904BU

Note: The alternative models listed above are similar in function and characteristics to the PDTC114EMB,315.

This information provides a comprehensive overview of the PDTC114EMB,315 semiconductor, including its specifications, features, application fields, and alternative models.

10个与PDTC114EMB,315在技术解决方案中的应用相关的常见问题及解答

  1. What is the PDTC114EMB,315 used for?

    • The PDTC114EMB,315 is a NPN resistor-equipped transistor designed for general-purpose amplifier and switching applications.

  2. What are the key features of the PDTC114EMB,315?

    • The PDTC114EMB,315 features a built-in bias resistor, high current gain, low collector-emitter saturation voltage, and a small SOT883 package.

  3. What is the maximum collector current of the PDTC114EMB,315?

    • The maximum collector current of the PDTC114EMB,315 is 100mA.

  4. What is the voltage rating of the PDTC114EMB,315?

    • The PDTC114EMB,315 has a maximum collector-emitter voltage of 50V.

  5. Can the PDTC114EMB,315 be used for switching applications?

    • Yes, the PDTC114EMB,315 is suitable for switching applications due to its low collector-emitter saturation voltage.

  6. What is the typical current gain of the PDTC114EMB,315?

    • The typical current gain of the PDTC114EMB,315 is 100 to 300.

  7. Is the PDTC114EMB,315 suitable for use in compact designs?

    • Yes, the PDTC114EMB,315's small SOT883 package makes it suitable for compact designs with limited space.

  8. What are the recommended operating conditions for the PDTC114EMB,315?

    • The PDTC114EMB,315 operates within a temperature range of -55°C to 150°C and is suitable for a wide range of applications.

  9. Can the PDTC114EMB,315 be used in audio amplifier circuits?

    • Yes, the PDTC114EMB,315 can be used in audio amplifier circuits due to its general-purpose amplifier application.

  10. Are there any specific design considerations when using the PDTC114EMB,315 in technical solutions?

    • Designers should consider the bias resistor, current gain, and voltage ratings when incorporating the PDTC114EMB,315 into technical solutions to ensure optimal performance.