PBSS8110S,126
Product Overview
- Category: Transistor
- Use: Switching applications
- Characteristics: High current capability, low VCE(sat), and low power dissipation
- Package: SOT666 (TSOP6)
- Essence: NPN medium power transistor
- Packaging/Quantity: Tape and reel, 3000 units per reel
Specifications
- Collector-emitter voltage (VCEO): 100 V
- Collector current (IC): 1 A
- Power dissipation (Ptot): 625 mW
- DC current gain (hFE): 100 to 400
- Transition frequency (ft): 150 MHz
Detailed Pin Configuration
- Pin 1: Base
- Pin 2: Emitter
- Pin 3: Collector
- Pin 4: Not connected
- Pin 5: Not connected
- Pin 6: Base
Functional Features
- High current gain
- Low saturation voltage
- Fast switching speed
Advantages
- Suitable for high-speed switching applications
- Small package size
- Low power dissipation
Disadvantages
- Limited maximum collector current compared to higher power transistors
- Moderate transition frequency
Working Principles
The PBSS8110S,126 operates as a bipolar junction transistor (BJT) in the NPN configuration. When a small current flows into the base, it controls a larger current between the collector and emitter, allowing for amplification or switching of electronic signals.
Detailed Application Field Plans
This transistor is commonly used in various switching applications such as power management, LED lighting, and motor control due to its high current capability and fast switching speed.
Detailed and Complete Alternative Models
- BC847BS,115
- BC817-25,115
- PMBT2222A,215
Note: The above information is based on the datasheet provided by the manufacturer.
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10个与PBSS8110S,126在技术解决方案中的应用相关的常见问题及解答
What is PBSS8110S,126?
- PBSS8110S,126 is a NPN low VCEsat (BISS) transistor in a SOT457 (SC-74) small Surface-Mounted Device (SMD) plastic package.
What are the typical applications of PBSS8110S,126?
- Typical applications include DC-DC converters, load switches, and power management in portable and battery-powered products.
What is the maximum collector current (IC) of PBSS8110S,126?
- The maximum collector current (IC) of PBSS8110S,126 is 1A.
What is the maximum collector-emitter voltage (VCEO) of PBSS8110S,126?
- The maximum collector-emitter voltage (VCEO) of PBSS8110S,126 is 100V.
What is the typical base-emitter saturation voltage (VBE(sat)) of PBSS8110S,126?
- The typical base-emitter saturation voltage (VBE(sat)) of PBSS8110S,126 is 0.75V at a collector current (IC) of 1A.
Can PBSS8110S,126 be used in high-frequency applications?
- Yes, PBSS8110S,126 can be used in high-frequency applications due to its low VCEsat characteristics.
Is PBSS8110S,126 suitable for automotive applications?
- Yes, PBSS8110S,126 is suitable for automotive applications as it meets the AEC-Q101 standard.
What are the thermal characteristics of PBSS8110S,126?
- The thermal resistance from junction to ambient (RthJA) is 250°C/W in free air and 150°C/W on a PCB with 25mm² copper area.
Does PBSS8110S,126 have built-in ESD protection?
- Yes, PBSS8110S,126 has built-in ESD protection up to 2kV (HBM) according to the JESD22-A114F standard.
Are there any known reliability issues with PBSS8110S,126?
- There are no known reliability issues with PBSS8110S,126 when used within its specified operating conditions.