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PDTC123EE,115
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PDTC123EE,115

Product Overview

  • Belongs to: Electronic Component
  • Category: Transistor
  • Use: Amplification and Switching
  • Characteristics: Small size, high reliability, low power consumption
  • Package: SOT-23
  • Essence: NPN Bipolar Junction Transistor
  • Packaging/Quantity: Tape & Reel, 3000 units per reel

Specifications

  • Collector-Emitter Voltage (VCEO): 100V
  • Collector Current (IC): 100mA
  • Power Dissipation (Ptot): 250mW
  • Transition Frequency (fT): 250MHz
  • Operating Temperature Range: -55°C to +150°C

Detailed Pin Configuration

  1. Emitter (E)
  2. Base (B)
  3. Collector (C)

Functional Features

  • High voltage capability
  • Low leakage current
  • Fast switching speed
  • Suitable for general purpose amplification and switching applications

Advantages

  • Small package size
  • Wide operating temperature range
  • High transition frequency

Disadvantages

  • Limited collector current compared to other transistors in the same category

Working Principles

The PDTC123EE,115 is an NPN bipolar junction transistor. When a small current flows into the base terminal, it controls a much larger current between the collector and emitter terminals. This allows the transistor to amplify or switch electronic signals.

Detailed Application Field Plans

  1. Audio amplification circuits
  2. Signal switching circuits
  3. Sensor interfacing circuits
  4. Oscillator circuits

Detailed and Complete Alternative Models

  1. BC337
  2. 2N3904
  3. 2N2222

This comprehensive entry provides a detailed overview of the PDTC123EE,115 transistor, including its specifications, pin configuration, functional features, advantages, disadvantages, working principles, application field plans, and alternative models.

10个与PDTC123EE,115在技术解决方案中的应用相关的常见问题及解答

  1. What is PDTC123EE,115?

    • PDTC123EE,115 is a high-performance NPN bipolar junction transistor (BJT) designed for general-purpose amplifier and switching applications.

  2. What are the key features of PDTC123EE,115?

    • The key features of PDTC123EE,115 include high current gain, low saturation voltage, and high transition frequency, making it suitable for various technical solutions.

  3. What are the typical applications of PDTC123EE,115?

    • PDTC123EE,115 is commonly used in audio amplifiers, signal processing circuits, motor control, and other general-purpose switching applications.

  4. What is the maximum collector current rating for PDTC123EE,115?

    • The maximum collector current rating for PDTC123EE,115 is typically around 100mA, making it suitable for low to medium power applications.

  5. What is the voltage rating for PDTC123EE,115?

    • PDTC123EE,115 typically has a maximum collector-emitter voltage rating of around 50V, making it suitable for low voltage applications.

  6. Is PDTC123EE,115 suitable for high-frequency applications?

    • Yes, PDTC123EE,115 has a high transition frequency, making it suitable for high-frequency applications such as RF amplifiers and oscillators.

  7. What is the typical gain of PDTC123EE,115?

    • The typical current gain (hFE) of PDTC123EE,115 is around 100 to 300, depending on the operating conditions.

  8. Does PDTC123EE,115 require external biasing components?

    • Yes, PDTC123EE,115 typically requires external biasing components such as resistors and capacitors for proper operation in amplifier and switching circuits.

  9. Can PDTC123EE,115 be used in temperature-sensitive applications?

    • PDTC123EE,115 has a moderate temperature range and can be used in applications where moderate temperature stability is required.

  10. Are there any specific layout considerations for using PDTC123EE,115 in a circuit?

    • It is recommended to follow standard PCB layout guidelines for high-frequency and high-gain devices when using PDTC123EE,115 in a circuit to minimize parasitic effects and ensure stable operation.