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MBT3904DW2T1G
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MBT3904DW2T1G

Introduction

The MBT3904DW2T1G is a bipolar junction transistor (BJT) belonging to the category of small signal transistors. This device is commonly used in amplification and switching applications due to its high frequency and low power characteristics.

Basic Information Overview

  • Category: Small Signal Transistor
  • Use: Amplification and Switching
  • Characteristics: High Frequency, Low Power
  • Package: SOT-363
  • Essence: NPN Silicon Epitaxial Planar Transistor
  • Packaging/Quantity: Tape & Reel, 3000 per reel

Specifications

  • Collector-Base Voltage (VCBO): 40V
  • Collector-Emitter Voltage (VCEO): 40V
  • Emitter-Base Voltage (VEBO): 5V
  • Collector Current (IC): 200mA
  • Total Power Dissipation (PTOT): 300mW
  • Transition Frequency (fT): 250MHz
  • Operating and Storage Junction Temperature Range: -55°C to +150°C

Detailed Pin Configuration

The MBT3904DW2T1G features a SOT-363 package with the following pin configuration: 1. Emitter (E) 2. Base (B) 3. Collector (C)

Functional Features

  • High Transition Frequency
  • Low Noise Figure
  • High Current Gain

Advantages

  • Suitable for High-Speed Switching Applications
  • Compact SOT-363 Package
  • Wide Operating Temperature Range

Disadvantages

  • Relatively Low Collector Current Rating
  • Limited Power Dissipation Capability

Working Principles

The MBT3904DW2T1G operates based on the principles of bipolar junction transistors, utilizing the control of current flow between its three terminals to amplify or switch electronic signals.

Detailed Application Field Plans

This transistor is widely used in various electronic circuits such as audio amplifiers, oscillators, and signal processing circuits. Its high frequency capability makes it suitable for radio frequency (RF) applications as well.

Detailed and Complete Alternative Models

  • 2N3904
  • BC547
  • BC548
  • 2SC945

In conclusion, the MBT3904DW2T1G is a versatile small signal transistor with high frequency and low power characteristics, making it suitable for a wide range of amplification and switching applications in electronic circuits.

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10个与MBT3904DW2T1G在技术解决方案中的应用相关的常见问题及解答

  1. What is the maximum collector current of MBT3904DW2T1G?

    • The maximum collector current of MBT3904DW2T1G is 200mA.

  2. What is the maximum power dissipation of MBT3904DW2T1G?

    • The maximum power dissipation of MBT3904DW2T1G is 350mW.

  3. What is the voltage rating for MBT3904DW2T1G?

    • The voltage rating for MBT3904DW2T1G is 40V.

  4. What are the typical applications for MBT3904DW2T1G?

    • MBT3904DW2T1G is commonly used in amplification, switching, and general purpose applications.

  5. What is the gain bandwidth product of MBT3904DW2T1G?

    • The gain bandwidth product of MBT3904DW2T1G is typically around 300MHz.

  6. What is the pin configuration of MBT3904DW2T1G?

    • MBT3904DW2T1G has a standard NPN transistor pinout with the emitter, base, and collector pins.

  7. Is MBT3904DW2T1G suitable for low noise amplifier applications?

    • Yes, MBT3904DW2T1G can be used in low noise amplifier applications due to its low noise characteristics.

  8. What is the operating temperature range for MBT3904DW2T1G?

    • The operating temperature range for MBT3904DW2T1G is typically -55°C to 150°C.

  9. Can MBT3904DW2T1G be used in high frequency applications?

    • Yes, MBT3904DW2T1G is suitable for high frequency applications due to its fast switching speed.

  10. Does MBT3904DW2T1G require any external biasing components?

    • Yes, MBT3904DW2T1G requires appropriate biasing resistors and capacitors for proper operation in most circuits.