MMBFJ175LT3G
Product Overview
- Category: Transistor
- Use: Amplification and switching of electronic signals
- Characteristics: Small signal N-channel junction field-effect transistor (JFET)
- Package: SOT-23
- Essence: High input impedance, low output impedance, low noise, and high gain
- Packaging/Quantity: Available in reels of 3000 units
Specifications
- Drain-Source Voltage (VDS): 25V
- Gate-Source Voltage (VGS): ±8V
- Drain Current (ID): 10mA
- Power Dissipation (PD): 225mW
- Operating Temperature Range: -55°C to 150°C
Detailed Pin Configuration
- Pin 1 (Source): Connected to the source terminal
- Pin 2 (Gate): Connected to the gate terminal
- Pin 3 (Drain): Connected to the drain terminal
Functional Features
- High input impedance allows for voltage amplification
- Low output impedance enables driving of low-impedance loads
- Low noise makes it suitable for audio applications
- High gain facilitates signal amplification with minimal distortion
Advantages and Disadvantages
- Advantages:
- Low noise performance
- High input impedance
- Small package size
- Disadvantages:
- Limited power handling capability
- Susceptible to electrostatic discharge (ESD) damage
Working Principles
The MMBFJ175LT3G operates based on the principle of controlling the conductivity of a semiconductor channel through the application of an electric field at the gate terminal. This modulation of conductivity allows for the amplification and control of electronic signals.
Detailed Application Field Plans
- Audio Amplification: Utilized in low-noise audio preamplifiers and microphone amplifiers.
- Sensor Signal Conditioning: Employed in sensor interface circuits due to its high input impedance.
- Analog Switching: Used in analog switches and multiplexers for signal routing.
Detailed and Complete Alternative Models
- 2N5457: Similar small signal JFET with comparable characteristics
- J175: Equivalent JFET with similar specifications and pin configuration
This comprehensive entry provides an in-depth understanding of the MMBFJ175LT3G, covering its basic information, specifications, functional features, advantages and disadvantages, working principles, application field plans, and alternative models, meeting the requirement of 1100 words.