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MPSH17_D26Z

MPSH17_D26Z

Product Overview

  • Category: Transistor
  • Use: Amplification and switching of electronic signals
  • Characteristics: High gain, low noise, small package size
  • Package: SOT-23
  • Essence: NPN silicon transistor
  • Packaging/Quantity: Tape and reel, 3000 units per reel

Specifications

  • Collector-Base Voltage (VCBO): 60V
  • Collector-Emitter Voltage (VCEO): 45V
  • Emitter-Base Voltage (VEBO): 5V
  • Collector Current (IC): 100mA
  • Power Dissipation (Pd): 225mW
  • Transition Frequency (ft): 250MHz
  • Operating Temperature Range: -55°C to 150°C

Detailed Pin Configuration

  1. Collector (C)
  2. Base (B)
  3. Emitter (E)

Functional Features

  • High voltage capability
  • Low leakage current
  • Fast switching speed
  • Small footprint

Advantages and Disadvantages

Advantages

  • High gain
  • Low noise
  • Wide operating temperature range
  • Suitable for high-frequency applications

Disadvantages

  • Limited collector current
  • Relatively low power dissipation

Working Principles

The MPSH17_D26Z operates as a bipolar junction transistor (BJT), where the flow of current is controlled by the voltage applied to the base terminal. It amplifies and switches electronic signals by modulating the current flowing between the collector and emitter terminals.

Detailed Application Field Plans

The MPSH17_D26Z is commonly used in: - Radio frequency (RF) amplifiers - Oscillators - Signal processing circuits - High-frequency communication systems

Detailed and Complete Alternative Models

  • BC547
  • 2N3904
  • 2SC945
  • PN2222A

This completes the English editing encyclopedia entry structure for MPSH17_D26Z, providing comprehensive information about its category, use, characteristics, specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models.

10个与MPSH17_D26Z在技术解决方案中的应用相关的常见问题及解答

  1. What is MPSH17_D26Z?

    • MPSH17_D26Z is a high-speed switching transistor designed for use in applications requiring high voltage and high speed, such as RF amplifiers and oscillators.

  2. What are the key features of MPSH17_D26Z?

    • The key features of MPSH17_D26Z include high voltage capability, low leakage current, and high transition frequency.

  3. What are the typical applications of MPSH17_D26Z?

    • Typical applications of MPSH17_D26Z include RF amplifiers, oscillators, high-speed switching circuits, and pulse generators.

  4. What is the maximum voltage rating for MPSH17_D26Z?

    • The maximum voltage rating for MPSH17_D26Z is typically around 300 volts.

  5. What is the transition frequency of MPSH17_D26Z?

    • The transition frequency of MPSH17_D26Z is typically in the range of 100-250 MHz.

  6. What are the recommended operating conditions for MPSH17_D26Z?

    • The recommended operating conditions for MPSH17_D26Z include a collector current of 50 mA, a collector-emitter voltage of 25 volts, and a power dissipation of 350 mW.

  7. Can MPSH17_D26Z be used in low-power applications?

    • Yes, MPSH17_D26Z can be used in low-power applications, but it is primarily designed for high-speed and high-voltage applications.

  8. Does MPSH17_D26Z require any special heat sinking or thermal considerations?

    • Yes, due to its high power dissipation, MPSH17_D26Z may require special heat sinking or thermal considerations to ensure proper performance and reliability.

  9. Are there any specific layout considerations when using MPSH17_D26Z in a circuit?

    • It is recommended to minimize parasitic capacitance and inductance in the layout when using MPSH17_D26Z to maintain high-frequency performance.

  10. Where can I find detailed application notes and reference designs for using MPSH17_D26Z in technical solutions?

    • Detailed application notes and reference designs for using MPSH17_D26Z can typically be found in the manufacturer's datasheet, application notes, or technical support resources.