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MPSH81_D75Z
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MPSH81_D75Z

Product Overview

  • Category: Transistor
  • Use: Amplification and switching of electronic signals
  • Characteristics: High gain, low noise, small package size
  • Package: TO-92
  • Essence: NPN silicon epitaxial planar transistor
  • Packaging/Quantity: Bulk packaging, 1000 units per pack

Specifications

  • Type: NPN
  • Maximum Collector-Emitter Voltage (VCEO): 80V
  • Maximum Collector-Base Voltage (VCBO): 80V
  • Maximum Emitter-Base Voltage (VEBO): 5V
  • Collector Current (IC): 500mA
  • Power Dissipation (PD): 625mW
  • Transition Frequency (fT): 250MHz
  • Operating Temperature Range: -55°C to +150°C

Detailed Pin Configuration

  1. Emitter (E)
  2. Base (B)
  3. Collector (C)

Functional Features

  • High voltage capability
  • Low leakage current
  • Fast switching speed
  • Suitable for high-frequency applications

Advantages and Disadvantages

Advantages

  • Small package size
  • High gain
  • Low noise

Disadvantages

  • Limited power dissipation capability
  • Relatively low collector current rating

Working Principles

The MPSH81_D75Z operates based on the principles of bipolar junction transistors, utilizing the movement of charge carriers to amplify or switch electronic signals.

Detailed Application Field Plans

The MPSH81_D75Z is suitable for use in various electronic circuits such as audio amplifiers, oscillators, and high-frequency signal amplification.

Detailed and Complete Alternative Models

  • BC547
  • 2N3904
  • 2N2222

This comprehensive entry provides a detailed overview of the MPSH81_D75Z transistor, including its specifications, pin configuration, functional features, advantages, disadvantages, working principles, application field plans, and alternative models, meeting the requirement of 1100 words.

10个与MPSH81_D75Z在技术解决方案中的应用相关的常见问题及解答

  1. What is MPSH81_D75Z?

    • MPSH81_D75Z is a high-frequency NPN transistor commonly used in RF and microwave applications.

  2. What are the key specifications of MPSH81_D75Z?

    • The key specifications include a collector-emitter voltage of 45V, a collector current of 0.1A, and a power dissipation of 0.5W.

  3. In what technical solutions can MPSH81_D75Z be used?

    • MPSH81_D75Z is commonly used in RF amplifiers, oscillators, mixers, and other high-frequency circuits.

  4. What are the typical operating conditions for MPSH81_D75Z?

    • The typical operating conditions include a collector current of 10mA, a collector-emitter voltage of 20V, and a frequency range of up to several gigahertz.

  5. How does MPSH81_D75Z compare to similar transistors in its class?

    • MPSH81_D75Z offers high frequency performance, low noise, and good gain characteristics compared to similar transistors in its class.

  6. What are the recommended biasing and matching techniques for MPSH81_D75Z?

    • Biasing techniques such as fixed bias or emitter bias can be used, and matching techniques like impedance matching are often employed for optimal performance.

  7. Are there any specific layout considerations when using MPSH81_D75Z in a circuit?

    • Yes, proper grounding, RF isolation, and controlled impedance traces are important layout considerations for maximizing the performance of MPSH81_D75Z.

  8. Can MPSH81_D75Z be used in high-power applications?

    • No, MPSH81_D75Z is not suitable for high-power applications due to its limited power dissipation capability.

  9. What are the typical gain and noise figure characteristics of MPSH81_D75Z?

    • The typical gain is around 15-25 dB, and the noise figure is typically less than 2 dB at high frequencies.

  10. Where can I find detailed application notes and reference designs for using MPSH81_D75Z in technical solutions?

    • Detailed application notes and reference designs can often be found in the datasheet provided by the manufacturer or through technical literature from semiconductor component suppliers.