STD110N02RT4G

Product Overview

• Category: Power MOSFET
• Use: Switching applications in power supplies, motor control, and other high-current applications
• Characteristics: High current capability, low on-resistance, fast switching speed
• Package: D2PAK (TO-263)
• Essence: N-channel enhancement mode power MOSFET
• Packaging/Quantity: Tape & Reel, 800 units per reel

Specifications

• Voltage Rating: 24V
• Continuous Drain Current: 110A
• On-Resistance: 2.8mΩ
• Gate Threshold Voltage: 2V
• Total Gate Charge: 68nC
• Operating Temperature Range: -55°C to 175°C

Detailed Pin Configuration

1. Source
2. Gate
3. Drain

Functional Features

• Low gate charge for efficient switching
• Excellent thermal performance
• Avalanche energy specified
• RoHS compliant

Advantages and Disadvantages

Advantages

• High current handling capability
• Low on-resistance for reduced power dissipation
• Fast switching speed for improved efficiency

Disadvantages

• Higher gate capacitance compared to some alternative models
• Relatively higher cost compared to standard MOSFETs

Working Principles

The STD110N02RT4G operates based on the principle of field-effect transistors, where the voltage applied to the gate terminal controls the flow of current between the source and drain terminals. When a sufficient voltage is applied to the gate, the MOSFET allows current to pass through, and when the gate voltage is removed, the current flow ceases.

Detailed Application Field Plans

The STD110N02RT4G is suitable for various applications including: - Power supplies - Motor control - DC-DC converters - Battery management systems - Inverters

Detailed and Complete Alternative Models

1. STP110N8F6

   • Category: Power MOSFET
   • Use: High-frequency applications
   • Characteristics: Low input and output capacitance
   • Package: TO-220
   • Voltage Rating: 80V
   • Continuous Drain Current: 110A
   • On-Resistance: 8mΩ

2. IRF3205

   • Category: Power MOSFET
   • Use: General-purpose switching
   • Characteristics: Low gate charge
   • Package: TO-220
   • Voltage Rating: 55V
   • Continuous Drain Current: 110A
   • On-Resistance: 8mΩ

3. FDP8870

   • Category: Power MOSFET
   • Use: Synchronous rectification
   • Characteristics: Low reverse recovery charge
   • Package: D2PAK
   • Voltage Rating: 30V
   • Continuous Drain Current: 120A
   • On-Resistance: 7mΩ

In conclusion, the STD110N02RT4G is a high-performance power MOSFET suitable for a wide range of high-current switching applications. Its low on-resistance, high current capability, and fast switching speed make it an ideal choice for demanding power electronics designs.

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