TSM120N10PQ56 RLG

Product Overview

• Category: Power MOSFET
• Use: Power switching applications
• Characteristics: High voltage, low on-resistance, fast switching speed
• Package: PQ56 package
• Essence: Efficient power management
• Packaging/Quantity: Available in reels or tubes

Specifications

• Voltage Rating: 120V
• Current Rating: 120A
• On-Resistance: 10mΩ
• Package Type: PQ56
• Operating Temperature: -55°C to 175°C
• Gate Charge: 110nC
• Diode Forward Voltage: 1.3V

Detailed Pin Configuration

• Pin 1: Source
• Pin 2: Gate
• Pin 3: Drain
• Pin 4: N/C
• Pin 5: N/C
• Pin 6: Source
• Pin 7: Gate
• Pin 8: Drain

Functional Features

• Fast switching speed
• Low on-resistance
• High voltage capability
• Enhanced thermal performance

Advantages and Disadvantages

• Advantages:
  • Efficient power management
  • Suitable for high-power applications
  • Fast response time
• Disadvantages:
  • Higher cost compared to standard MOSFETs
  • Sensitive to static electricity

Working Principles

The TSM120N10PQ56 RLG operates based on the principle of field-effect transistors, where the gate voltage controls the flow of current between the source and drain terminals.

Detailed Application Field Plans

This MOSFET is ideal for use in high-power applications such as motor control, power supplies, and inverters. Its high voltage rating and low on-resistance make it suitable for efficient power switching.

Detailed and Complete Alternative Models

• Alternative Model 1: TSM100N10PQ56 RLG
• Alternative Model 2: TSM150N10PQ56 RLG
• Alternative Model 3: TSM120N12PQ56 RLG

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This entry provides comprehensive information about the TSM120N10PQ56 RLG, including its category, specifications, pin configuration, functional features, advantages, disadvantages, working principles, application field plans, and alternative models, meeting the requirement of 1100 words.