Toshiba Semiconductor and Storage
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TK11A50D(STA4,Q,M)
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TK11A50D(STA4,Q,M)

Product Overview

  • Category: Power MOSFET
  • Use: Power switching applications
  • Characteristics: High voltage, low on-resistance, fast switching speed
  • Package: TO-220SIS, 3-pin
  • Essence: Silicon N-channel MOSFET
  • Packaging/Quantity: Tape & Reel (Q), Tube (M)

Specifications

  • Voltage Rating: 500V
  • Current Rating: 11A
  • RDS(ON): 0.5Ω
  • Gate Threshold Voltage: 2-4V
  • Operating Temperature: -55°C to 150°C

Detailed Pin Configuration

  1. Gate (G)
  2. Drain (D)
  3. Source (S)

Functional Features

  • Low input capacitance for high-speed switching
  • Avalanche energy specified
  • Improved dv/dt capability

Advantages and Disadvantages

  • Advantages:
    • Fast switching speed
    • Low on-resistance
    • High voltage rating
  • Disadvantages:
    • Higher gate threshold voltage
    • Limited operating temperature range

Working Principles

The TK11A50D operates based on the principle of field-effect transistors, utilizing an electric field to control the conductivity of the channel.

Detailed Application Field Plans

  1. Power supplies
  2. Motor control
  3. Inverters
  4. Switching regulators

Detailed and Complete Alternative Models

  1. TK10A50D
    • Voltage Rating: 500V
    • Current Rating: 10A
    • RDS(ON): 0.6Ω
  2. TK12A50D
    • Voltage Rating: 500V
    • Current Rating: 12A
    • RDS(ON): 0.4Ω

This comprehensive entry provides a detailed understanding of the TK11A50D(STA4,Q,M) Power MOSFET, including its specifications, features, application plans, and alternative models.

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10个与TK11A50D(STA4,Q,M)在技术解决方案中的应用相关的常见问题及解答

  1. What is the maximum drain-source voltage for TK11A50D(STA4,Q,M)?

    • The maximum drain-source voltage for TK11A50D(STA4,Q,M) is 500V.

  2. What is the continuous drain current rating for TK11A50D(STA4,Q,M)?

    • The continuous drain current rating for TK11A50D(STA4,Q,M) is 11A.

  3. What is the on-state resistance (RDS(on)) of TK11A50D(STA4,Q,M)?

    • The on-state resistance (RDS(on)) of TK11A50D(STA4,Q,M) is specified at a certain test condition, typically around 0.65 ohms.

  4. Can TK11A50D(STA4,Q,M) be used in high-frequency switching applications?

    • Yes, TK11A50D(STA4,Q,M) can be used in high-frequency switching applications due to its low on-state resistance and fast switching characteristics.

  5. What is the gate threshold voltage for TK11A50D(STA4,Q,M)?

    • The gate threshold voltage for TK11A50D(STA4,Q,M) is typically around 4V.

  6. Is TK11A50D(STA4,Q,M) suitable for use in power supply designs?

    • Yes, TK11A50D(STA4,Q,M) is suitable for use in power supply designs due to its high voltage and current ratings.

  7. What are the typical applications for TK11A50D(STA4,Q,M)?

    • Typical applications for TK11A50D(STA4,Q,M) include switch mode power supplies, motor control, and general purpose inverter circuits.

  8. Does TK11A50D(STA4,Q,M) require a heatsink for proper operation?

    • Depending on the application and operating conditions, TK11A50D(STA4,Q,M) may require a heatsink for proper thermal management.

  9. What are the recommended operating temperature range for TK11A50D(STA4,Q,M)?

    • The recommended operating temperature range for TK11A50D(STA4,Q,M) is typically -55°C to 150°C.

  10. Are there any specific considerations for driving the gate of TK11A50D(STA4,Q,M)?

    • It is important to ensure that the gate of TK11A50D(STA4,Q,M) is driven with appropriate voltage levels and timing to achieve optimal performance and reliability.