SI3909DV-T1-E3

Product Overview

• Category: Power MOSFET
• Use: Switching applications
• Characteristics: High efficiency, low on-resistance, small package size
• Package: DFN (Dual Flat No-Lead)
• Essence: Efficient power switching
• Packaging/Quantity: Tape and reel, 3000 units per reel

Specifications

• Voltage Rating: 30V
• Continuous Drain Current: 8.7A
• On-Resistance: 14mΩ
• Power Dissipation: 2.5W
• Operating Temperature Range: -55°C to 150°C

Detailed Pin Configuration

The SI3909DV-T1-E3 features a standard DFN package with the following pin configuration: 1. Source 2. Gate 3. Drain 4. Drain

Functional Features

• Low on-resistance for high efficiency
• Fast switching speed
• Low gate charge for reduced power loss
• ESD protection for improved reliability

Advantages and Disadvantages

Advantages

• High efficiency
• Small package size
• ESD protection
• Low on-resistance

Disadvantages

• Limited voltage rating
• Moderate continuous drain current

Working Principles

The SI3909DV-T1-E3 operates based on the principles of field-effect transistors, utilizing its low on-resistance and fast switching speed to efficiently control power flow in switching applications.

Detailed Application Field Plans

This MOSFET is suitable for a wide range of applications including: - DC-DC converters - Load switches - Motor control - LED lighting

Detailed and Complete Alternative Models

• SI2309DS-T1-GE3
• SI4410DY-T1-E3
• SI7469DP-T1-GE3
• SI7850DP-T1-GE3

In conclusion, the SI3909DV-T1-E3 Power MOSFET offers high efficiency and compact design, making it ideal for various switching applications. Its low on-resistance and fast switching speed make it a reliable choice for applications requiring efficient power control.

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