SI4286DY-T1-GE3

Introduction

The SI4286DY-T1-GE3 is a high-performance MOSFET belonging to the category of power management devices. This device is widely used in various electronic applications due to its unique characteristics and versatile nature.

Basic Information Overview

• Category: Power Management Device
• Use: Voltage Regulation, Power Switching
• Characteristics: High Efficiency, Low Power Dissipation, Fast Switching Speed
• Package: SOIC-8
• Essence: MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor)
• Packaging/Quantity: Tape & Reel, 2500 units per reel

Specifications

• Voltage Rating: 30V
• Current Rating: 10A
• RDS(ON): 5.2mΩ
• Gate Threshold Voltage: 1.5V
• Operating Temperature Range: -55°C to 150°C

Detailed Pin Configuration

1. Gate
2. Source
3. Drain
4. N/C
5. N/C
6. Drain
7. Source
8. Gate

Functional Features

• High Current Capability
• Low On-Resistance
• Fast Switching Speed
• Enhanced Thermal Performance

Advantages and Disadvantages

Advantages

• Efficient Power Management
• Reduced Power Dissipation
• Compact Package Size
• Wide Operating Temperature Range

Disadvantages

• Sensitivity to ESD (Electrostatic Discharge)
• Limited Voltage Rating

Working Principles

The SI4286DY-T1-GE3 operates based on the principle of controlling the flow of current between the source and drain terminals using the gate voltage. By modulating the gate voltage, the device can efficiently regulate the power flow, making it suitable for various power management applications.

Detailed Application Field Plans

This MOSFET is extensively used in: - DC-DC Converters - Motor Control Systems - Battery Management - LED Lighting Applications - Power Supplies

Detailed and Complete Alternative Models

• SI2301DS-T1-GE3
• SI2333DDS-T1-GE3
• SI2365DS-T1-GE3
• SI2399DST1E3

In conclusion, the SI4286DY-T1-GE3 MOSFET offers high performance and reliability, making it an ideal choice for power management applications across various industries.

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