SI4288DY-T1-GE3

Product Overview

Category: Integrated Circuit
Use: Power Management
Characteristics: High efficiency, low power consumption
Package: SOIC-8
Essence: MOSFET
Packaging/Quantity: Tape & Reel, 2500 units

Specifications

• Voltage - Drain-Source Breakdown (Max): 30V
• Current - Continuous Drain (Id) @ 25°C: 6.5A
• Rds On (Max) @ Id, Vgs: 10 mOhm @ 6.5A, 10V
• Vgs(th) (Max) @ Id: 2.35V @ 250µA
• Gate Charge (Qg) @ Vgs: 18nC @ 10V
• Input Capacitance (Ciss) @ Vds: 1500pF @ 15V

Detailed Pin Configuration

1. GATE: Connects to the gate of the MOSFET
2. DRAIN: Connects to the drain of the MOSFET
3. SOURCE: Connects to the source of the MOSFET
4. N/C: No connection
5. SOURCE: Connects to the source of the MOSFET
6. DRAIN: Connects to the drain of the MOSFET
7. GATE: Connects to the gate of the MOSFET
8. N/C: No connection

Functional Features

• Low Rds(on) for high efficiency
• Fast switching speed for improved performance
• Low input and output capacitance for reduced power loss

Advantages and Disadvantages

Advantages: - High efficiency - Low power consumption - Fast switching speed

Disadvantages: - Sensitive to overvoltage conditions - Limited maximum current rating

Working Principles

The SI4288DY-T1-GE3 is a MOSFET used in power management applications. It operates by controlling the flow of current between the drain and source terminals based on the voltage applied to the gate terminal.

Detailed Application Field Plans

This MOSFET is commonly used in DC-DC converters, power supplies, motor control, and battery management systems due to its high efficiency and low power consumption characteristics.

Detailed and Complete Alternative Models

• SI2301DS-T1-GE3: Similar specifications and package type
• SI2337DS-T1-GE3: Comparable characteristics and pin configuration
• SI2365DS-T1-GE3: Alternative with higher current rating and similar package

This completes the entry for SI4288DY-T1-GE3 in the English editing encyclopedia format.