SI4953ADY-T1-GE3

Product Overview

Category: Integrated Circuit
Use: Power MOSFET
Characteristics: Low on-resistance, high-speed switching
Package: DFN (Dual Flat No-Lead)
Essence: Power management
Packaging/Quantity: Tape & Reel, 3000 units

Specifications

• Voltage - Drain-Source Breakdown (Max): 30V
• Current - Continuous Drain (Id) @ 25°C: 15A
• Rds On (Max) @ Id, Vgs: 4.5 mOhm @ 7.5A, 10V
• Vgs(th) (Max) @ Id: 2.35V @ 250µA
• Gate Charge (Qg) @ Vgs: 18nC @ 10V
• Input Capacitance (Ciss) @ Vds: 2100pF @ 15V

Detailed Pin Configuration

1. Pin 1: Gate
2. Pin 2: Source
3. Pin 3: Drain

Functional Features

• Low on-resistance for efficient power management
• High-speed switching for improved performance
• Enhanced thermal characteristics for reliability

Advantages and Disadvantages

Advantages: - Efficient power management - High-performance switching - Reliable thermal characteristics

Disadvantages: - Sensitive to overvoltage conditions - Limited voltage breakdown capability

Working Principles

The SI4953ADY-T1-GE3 operates based on the principles of field-effect transistors, utilizing its low on-resistance and high-speed switching capabilities to effectively manage power flow within electronic circuits.

Detailed Application Field Plans

This MOSFET is suitable for a wide range of applications including: - DC-DC converters - Power supplies - Motor control - Load switches

Detailed and Complete Alternative Models

1. SI4953BDY-T1-GE3
   • Similar specifications and package
   • Suitable alternative for power management applications
2. SI4953CDY-T1-GE3
   • Higher voltage breakdown capability
   • Alternative for applications requiring higher voltage handling

This completes the entry for SI4953ADY-T1-GE3 in the English editing encyclopedia format.