SI5935DC-T1-GE3

Introduction

The SI5935DC-T1-GE3 is a power MOSFET belonging to the category of semiconductor devices. This device is widely used in various electronic applications due to its unique characteristics and performance.

Basic Information Overview

• Category: Power MOSFET
• Use: Switching and amplification in electronic circuits
• Characteristics: High voltage capability, low on-resistance, fast switching speed
• Package: DFN (Dual Flat No-Lead)
• Essence: Efficient power management and control
• Packaging/Quantity: Tape & Reel, 3000 units per reel

Specifications

• Voltage Rating: 30V
• Current Rating: 12A
• On-Resistance: 8.5mΩ
• Package Type: DFN 5x6

Detailed Pin Configuration

The SI5935DC-T1-GE3 features a standard pin configuration with the following pins: 1. Gate (G) 2. Drain (D) 3. Source (S)

Functional Features

• Fast switching speed for improved efficiency
• Low on-resistance for reduced power loss
• High voltage capability for versatile applications

Advantages

• Enhanced power management capabilities
• Improved system efficiency
• Compact package size for space-constrained designs

Disadvantages

• Sensitive to overvoltage conditions
• Limited current handling capacity compared to higher-rated devices

Working Principles

The SI5935DC-T1-GE3 operates based on the principles of field-effect transistors, utilizing the control of electric fields to modulate the flow of current between the drain and source terminals.

Detailed Application Field Plans

This power MOSFET is commonly used in various applications such as: - DC-DC converters - Motor control systems - Power supplies - LED lighting

Detailed and Complete Alternative Models

• SI5945DC-T1-GE3
• SI5936DC-T1-GE3
• SI5946DC-T1-GE3

In conclusion, the SI5935DC-T1-GE3 power MOSFET offers high-performance characteristics and is suitable for a wide range of electronic applications, making it a popular choice among designers and engineers.

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