Vishay Siliconix
图片可能具有代表性。
产品详情请参阅规格.
SQJB60EP-T1_GE3
查看详情 数据表

SQJB60EP-T1_GE3

Product Overview

  • Category: Power MOSFET
  • Use: Power switching applications
  • Characteristics: High efficiency, low on-resistance, fast switching speed
  • Package: TO-263AB
  • Essence: Efficient power management
  • Packaging/Quantity: Tape & Reel, 800 units per reel

Specifications

  • Voltage Rating: 600V
  • Current Rating: 60A
  • RDS(ON): 0.045 ohm
  • Gate Charge (Qg): 120nC
  • Operating Temperature Range: -55°C to 175°C

Detailed Pin Configuration

The SQJB60EP-T1_GE3 features a standard TO-263AB package with three pins: Gate (G), Drain (D), and Source (S).

Functional Features

  • High efficiency in power conversion
  • Low on-resistance for reduced power loss
  • Fast switching speed for improved performance

Advantages and Disadvantages

Advantages

  • High efficiency
  • Low on-resistance
  • Fast switching speed

Disadvantages

  • Higher cost compared to traditional MOSFETs
  • Sensitive to voltage spikes

Working Principles

The SQJB60EP-T1_GE3 operates based on the principle of field-effect transistors, where the gate voltage controls the conductivity between the drain and source terminals, enabling efficient power switching.

Detailed Application Field Plans

The SQJB60EP-T1_GE3 is ideal for use in various power electronics applications, including: - Switch-mode power supplies - Motor control - Solar inverters - Uninterruptible power supplies (UPS) - Electric vehicle charging systems

Detailed and Complete Alternative Models

  • SQJB30EP-T1_GE3: 300V, 30A, TO-263AB package
  • SQJB80EP-T1_GE3: 800V, 80A, TO-263AB package
  • SQJB100EP-T1_GE3: 1000V, 100A, TO-263AB package

This completes the entry for SQJB60EP-T1_GE3 in the English editing encyclopedia format.

10个与SQJB60EP-T1_GE3在技术解决方案中的应用相关的常见问题及解答

  1. What is the maximum power dissipation of SQJB60EP-T1_GE3?

    • The maximum power dissipation of SQJB60EP-T1_GE3 is 2.5W.

  2. What is the maximum continuous drain current of SQJB60EP-T1_GE3?

    • The maximum continuous drain current of SQJB60EP-T1_GE3 is 30A.

  3. What is the gate-source voltage (VGS) for SQJB60EP-T1_GE3?

    • The gate-source voltage (VGS) for SQJB60EP-T1_GE3 is ±20V.

  4. What is the on-resistance (RDS(on)) of SQJB60EP-T1_GE3?

    • The on-resistance (RDS(on)) of SQJB60EP-T1_GE3 is typically 6.5mΩ at VGS = 10V.

  5. What is the operating temperature range for SQJB60EP-T1_GE3?

    • The operating temperature range for SQJB60EP-T1_GE3 is -55°C to 175°C.

  6. Is SQJB60EP-T1_GE3 suitable for automotive applications?

    • Yes, SQJB60EP-T1_GE3 is designed for automotive applications.

  7. What is the package type of SQJB60EP-T1_GE3?

    • SQJB60EP-T1_GE3 comes in a PowerPAK® SO-8 package.

  8. Does SQJB60EP-T1_GE3 have built-in ESD protection?

    • Yes, SQJB60EP-T1_GE3 features built-in ESD protection.

  9. What are the typical applications for SQJB60EP-T1_GE3?

    • Typical applications for SQJB60EP-T1_GE3 include motor control, power management, and load switching.

  10. What is the gate charge (Qg) of SQJB60EP-T1_GE3?

    • The gate charge (Qg) of SQJB60EP-T1_GE3 is typically 25nC.