Diodes Incorporated
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产品详情请参阅规格.
ZXMN6A11GTA
数据表

ZXMN6A11GTA

MOSFET N-CH 60V 3.1A SOT223
型号
ZXMN6A11GTA
制造商/品牌
Diodes Incorporated
零件状态
Active
技术
MOSFET (Metal Oxide)
工作温度
-55°C ~ 150°C (TJ)
安装类型
Surface Mount
封装/箱体
TO-261-4, TO-261AA
供应商器件封装
SOT-223
功率耗散（最大）
2W (Ta)
场效应晶体管类型
N-Channel
漏源电压 (Vdss)
60V
电流 - 连续漏极 (Id) @ 25�C
3.1A (Ta)
Rds On（最大值）@ Id、Vgs
120 mOhm @ 2.5A, 10V
Vgs(th)（最大值）@Id
3V @ 250µA
栅极电荷 (Qg) (最大值) @ Vgs
5.7nC @ 10V
输入电容 (Ciss) (最大值) @ Vds
330pF @ 40V
电压 (最大值)
±20V
驱动电压（最大导通电阻、最小导通电阻）
4.5V, 10V
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有货 29802 PCS
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