GeneSiC Semiconductor
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KBU6M
数据表

KBU6M

DIODE BRIDGE 1000V 6A KBU
型号
KBU6M
制造商/品牌
GeneSiC Semiconductor
系列
-
零件状态
Active
包装
Bulk
技术
Standard
工作温度
-55°C ~ 150°C (TJ)
安装类型
Through Hole
封装/箱体
4-SIP, KBU
供应商器件封装
KBU
二极管类型
Single Phase
电压 - 峰值反向（最大）
1kV
电流 - 平均整流电流 (Io)
6A
电压 - 正向 (Vf) (最大值) @ If
1V @ 6A
电流 - 反向漏电流@Vr
10µA @ 1000V
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