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SI5511DC-T1-GE3
数据表

SI5511DC-T1-GE3

MOSFET N/P-CH 30V 4A 1206-8
型号
SI5511DC-T1-GE3
制造商/品牌
Vishay Siliconix
系列
TrenchFET®
零件状态
Obsolete
包装
Cut Tape (CT)
工作温度
-55°C ~ 150°C (TJ)
安装类型
Surface Mount
封装/箱体
8-SMD, Flat Lead
功率 - 最大
3.1W, 2.6W
供应商器件封装
1206-8 ChipFET™
场效应晶体管类型
N and P-Channel
场效应晶体管特性
Logic Level Gate
漏源电压 (Vdss)
30V
电流 - 连续漏极 (Id) @ 25�C
4A, 3.6A
Rds On（最大值）@ Id、Vgs
55 mOhm @ 4.8A, 4.5V
Vgs(th)（最大值）@Id
2V @ 250µA
栅极电荷 (Qg) (最大值) @ Vgs
7.1nC @ 5V
输入电容 (Ciss) (最大值) @ Vds
435pF @ 15V
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关键词 SI5511DC-T1-GE3
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