购买 Central Semiconductor Corp CTLDM303N-M832DS TR MOSFET 2N-CH 30V 3.6A TLM832DS - 天凌箭

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CTLDM303N-M832DS TR

数据表

CTLDM303N-M832DS TR

MOSFET 2N-CH 30V 3.6A TLM832DS

型号

CTLDM303N-M832DS TR

制造商/品牌

Central Semiconductor Corp

系列

-

零件状态

Last Time Buy

包装

Cut Tape (CT)

工作温度

-55°C ~ 150°C (TJ)

安装类型

Surface Mount

封装/箱体

8-TDFN Exposed Pad

功率 - 最大

1.65W

供应商器件封装

TLM832DS

场效应晶体管类型

2 N-Channel (Dual)

场效应晶体管特性

Standard

漏源电压 (Vdss)

30V

电流 - 连续漏极 (Id) @ 25�C

3.6A

Rds On（最大值）@ Id、Vgs

40 mOhm @ 1.8A, 4.5V

Vgs(th)（最大值）@Id

1.2V @ 250µA

栅极电荷 (Qg) (最大值) @ Vgs

13nC @ 4.5V

输入电容 (Ciss) (最大值) @ Vds

590pF @ 10V

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