Global Power Technologies Group
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GCMS008A120B1B1
更多信息 数据表

GCMS008A120B1B1

SIC MOSFET/SBD HALF BRIDGE MODUL
型号
GCMS008A120B1B1
制造商/品牌
Global Power Technologies Group
系列
-
零件状态
Active
封装/箱体
Power Module
类型
MOSFET
配置
Half Bridge
电压
1.2kV
当前的
300A
电压 - 隔离
2500Vrms
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