Infineon Technologies
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IPC90N04S53R6ATMA1
数据表

IPC90N04S53R6ATMA1

MOSFET N-CH 40V 90A 8TDSON-34
型号
IPC90N04S53R6ATMA1
制造商/品牌
Infineon Technologies
系列
Automotive, AEC-Q101, OptiMOS™
零件状态
Active
包装
Cut Tape (CT)
技术
MOSFET (Metal Oxide)
工作温度
-55°C ~ 175°C (TJ)
安装类型
Surface Mount
封装/箱体
8-PowerTDFN
供应商器件封装
PG-TDSON-8-34
功率耗散（最大）
63W (Tc)
场效应晶体管类型
N-Channel
场效应晶体管特性
-
漏源电压 (Vdss)
40V
电流 - 连续漏极 (Id) @ 25�C
90A (Tc)
Rds On（最大值）@ Id、Vgs
3.6 mOhm @ 45A, 10V
Vgs(th)（最大值）@Id
3.4V @ 23µA
栅极电荷 (Qg) (最大值) @ Vgs
32.6nC @ 10V
输入电容 (Ciss) (最大值) @ Vds
1950pF @ 25V
驱动电压（最大导通电阻、最小导通电阻）
7V, 10V
电压 (最大值)
±20V
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有货 39899 PCS
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