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FDG6301N
数据表

FDG6301N

MOSFET 2N-CH 25V 0.22A SC70-6
型号
FDG6301N
制造商/品牌
ON Semiconductor
系列
-
零件状态
Active
包装
Digi-Reel®
工作温度
-55°C ~ 150°C (TJ)
安装类型
Surface Mount
封装/箱体
6-TSSOP, SC-88, SOT-363
功率 - 最大
300mW
供应商器件封装
SC-70-6
场效应晶体管类型
2 N-Channel (Dual)
场效应晶体管特性
Logic Level Gate
漏源电压 (Vdss)
25V
电流 - 连续漏极 (Id) @ 25�C
220mA
Rds On（最大值）@ Id、Vgs
4 Ohm @ 220mA, 4.5V
Vgs(th)（最大值）@Id
1.5V @ 250µA
栅极电荷 (Qg) (最大值) @ Vgs
0.4nC @ 4.5V
输入电容 (Ciss) (最大值) @ Vds
9.5pF @ 10V
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