购买 Toshiba Semiconductor and Storage 2SK2009TE85LF MOSFET N-CH 30V 0.2A SMINI - 天凌箭

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2SK2009TE85LF

数据表

2SK2009TE85LF

MOSFET N-CH 30V 0.2A SMINI

型号

2SK2009TE85LF

制造商/品牌

Toshiba Semiconductor and Storage

系列

-

零件状态

Discontinued at Digi-Key

包装

Cut Tape (CT)

技术

MOSFET (Metal Oxide)

工作温度

150°C (TJ)

安装类型

Surface Mount

封装/箱体

TO-236-3, SC-59, SOT-23-3

供应商器件封装

SC-59-3

功率耗散（最大）

200mW (Ta)

场效应晶体管类型

N-Channel

场效应晶体管特性

-

漏源电压 (Vdss)

30V

电流 - 连续漏极 (Id) @ 25�C

200mA (Ta)

Rds On（最大值）@ Id、Vgs

2 Ohm @ 50MA, 2.5V

Vgs(th)（最大值）@Id

1.5V @ 100µA

栅极电荷 (Qg) (最大值) @ Vgs

-

输入电容 (Ciss) (最大值) @ Vds

70pF @ 3V

驱动电压（最大导通电阻、最小导通电阻）

2.5V

电压 (最大值)

±20V

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