Toshiba Semiconductor and Storage
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TPN3R704PL,L1Q
数据表

TPN3R704PL,L1Q

MOSFET N-CH 40V 80A TSON
型号
TPN3R704PL,L1Q
制造商/品牌
Toshiba Semiconductor and Storage
系列
U-MOSIX-H
零件状态
Active
包装
Cut Tape (CT)
技术
MOSFET (Metal Oxide)
工作温度
175°C
安装类型
Surface Mount
封装/箱体
8-PowerVDFN
供应商器件封装
8-TSON Advance (3.3x3.3)
功率耗散（最大）
630mW (Ta), 86W (Tc)
场效应晶体管类型
N-Channel
场效应晶体管特性
-
漏源电压 (Vdss)
40V
电流 - 连续漏极 (Id) @ 25�C
80A (Tc)
Rds On（最大值）@ Id、Vgs
3.7 mOhm @ 40A, 10V
Vgs(th)（最大值）@Id
2.4V @ 0.2mA
栅极电荷 (Qg) (最大值) @ Vgs
27nC @ 10V
输入电容 (Ciss) (最大值) @ Vds
2500pF @ 20V
驱动电压（最大导通电阻、最小导通电阻）
4.5V, 10V
电压 (最大值)
±20V
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