购买 Diodes Incorporated ZXMC10A816N8TC MOSFET N/P-CH 100V 2A 8-SOIC - 天凌箭

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数据表

ZXMC10A816N8TC

MOSFET N/P-CH 100V 2A 8-SOIC

型号

ZXMC10A816N8TC

制造商/品牌

Diodes Incorporated

系列

-

零件状态

Active

包装

Cut Tape (CT)

工作温度

-55°C ~ 150°C (TJ)

安装类型

Surface Mount

封装/箱体

8-SOIC (0.154", 3.90mm Width)

功率 - 最大

1.8W

供应商器件封装

8-SOP

场效应晶体管类型

N and P-Channel

场效应晶体管特性

Logic Level Gate

漏源电压 (Vdss)

100V

电流 - 连续漏极 (Id) @ 25�C

2A

Rds On（最大值）@ Id、Vgs

230 mOhm @ 1A, 10V

Vgs(th)（最大值）@Id

2.4V @ 250µA

栅极电荷 (Qg) (最大值) @ Vgs

9.2nC @ 10V

输入电容 (Ciss) (最大值) @ Vds

497pF @ 50V

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