购买 Diodes Incorporated ZXMC3A16DN8TA MOSFET N/P-CH 30V 8SOIC - 天凌箭

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数据表

ZXMC3A16DN8TA

MOSFET N/P-CH 30V 8SOIC

型号

ZXMC3A16DN8TA

制造商/品牌

Diodes Incorporated

系列

-

零件状态

Active

包装

Cut Tape (CT)

工作温度

-55°C ~ 150°C (TJ)

安装类型

Surface Mount

封装/箱体

8-SOIC (0.154", 3.90mm Width)

功率 - 最大

1.25W

供应商器件封装

8-SO

场效应晶体管类型

N and P-Channel

场效应晶体管特性

Logic Level Gate

漏源电压 (Vdss)

30V

电流 - 连续漏极 (Id) @ 25�C

4.9A, 4.1A

Rds On（最大值）@ Id、Vgs

35 mOhm @ 9A, 10V

Vgs(th)（最大值）@Id

1V @ 250µA (Min)

栅极电荷 (Qg) (最大值) @ Vgs

17.5nC @ 10V

输入电容 (Ciss) (最大值) @ Vds

796pF @ 25V

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