购买 Toshiba Semiconductor and Storage TK100L60W,VQ MOSFET N CH 600V 100A TO3P(L) - 天凌箭

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TK100L60W,VQ

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TK100L60W,VQ

MOSFET N CH 600V 100A TO3P(L)

型号

TK100L60W,VQ

制造商/品牌

Toshiba Semiconductor and Storage

系列

DTMOSIV

零件状态

Active

包装

Tube

技术

MOSFET (Metal Oxide)

工作温度

150°C (TJ)

安装类型

Through Hole

封装/箱体

TO-3PL

供应商器件封装

TO-3P(L)

功率耗散（最大）

797W (Tc)

场效应晶体管类型

N-Channel

场效应晶体管特性

Super Junction

漏源电压 (Vdss)

600V

电流 - 连续漏极 (Id) @ 25�C

100A (Ta)

Rds On（最大值）@ Id、Vgs

18 mOhm @ 50A, 10V

Vgs(th)（最大值）@Id

3.7V @ 5mA

栅极电荷 (Qg) (最大值) @ Vgs

360nC @ 10V

输入电容 (Ciss) (最大值) @ Vds

15000pF @ 30V

驱动电压（最大导通电阻、最小导通电阻）

10V

电压 (最大值)

±30V

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