购买 Microsemi Corporation APTM100A13SG MOSFET 2N-CH 1000V 65A SP6 - 天凌箭

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APTM100A13SG

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APTM100A13SG

MOSFET 2N-CH 1000V 65A SP6

型号

APTM100A13SG

制造商/品牌

Microsemi Corporation

系列

-

零件状态

Active

包装

Bulk

工作温度

-40°C ~ 150°C (TJ)

安装类型

Chassis Mount

封装/箱体

SP6

功率 - 最大

1250W

供应商器件封装

SP6

场效应晶体管类型

2 N-Channel (Half Bridge)

场效应晶体管特性

Standard

漏源电压 (Vdss)

1000V (1kV)

电流 - 连续漏极 (Id) @ 25�C

65A

Rds On（最大值）@ Id、Vgs

156 mOhm @ 32.5A, 10V

Vgs(th)（最大值）@Id

5V @ 6mA

栅极电荷 (Qg) (最大值) @ Vgs

562nC @ 10V

输入电容 (Ciss) (最大值) @ Vds

15200pF @ 25V

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